Used in almost every device imaginable, flash memory has been the standard for more than twenty years. However, IBM has finally developed its successor: phase-change memory (PCM).
While PCM will work in concert with DRAM (dynamic random-access memory) much like flash, the main difference between the present and future is that PCM will do so about 100 times faster, reading and writing data almost instantaneously. Additionally, flash memory starts to sputter out at about 30,000 write cycles, whereas PCM can handle about 10 million cycles.
Come 2016 when PCM is set to be commercially available probably amidst a landscape also including the likes of a next-gen Thunderbolt, waiting (and patience) will surely then be a thing of the past.